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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD998 DESCRIPTION With TO-3PML package Complement to type 2SB778 APPLICATIONS High power amplifier applications Recommended for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS MAX 120 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 5 Emitter-base voltage Open collector Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25ae 10 1.0 80 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5A; IB=0.5A IC=0.5A;VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 12 170 MIN 120 TYP. 2SD998 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB MAX UNIT V 2.5 1.5 10 10 160 |I |I V V A A MHz pF hFE Classifications R 55-110 O TOR NDU ICO E SEM ANG INCH 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD998 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD998 TOR NDU ICO E SEM ANG INCH 4 |
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